Equivalent Circuit For AC Response of Cu(In,Ga)Se2 Thin Film Solar Cells
Equivalent Circuit For AC Response of Cu(In,Ga)Se2 Thin Film Solar Cells
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Cu(In,Ga)Se2 薄膜太阳能电池交流响应的等效电路
DOI：
10.1109/pvsc40753.2019.8980822
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发表时间：
2019
期刊：
影响因子：
--
通讯作者：
P. Salomé
中科院分区：
文献类型：
--
作者：
J. Cunha;C. Rocha;C. Vinhais;P. Fernandes;P. Salomé
超薄Cu（In，Ga）Se2（CIGS）是降低CIGS太阳能电池生产成本的理想材料。本工作的目的是研究标准厚度，钝化和钝化的MEMS器件的交流电响应。导纳测量允许为每种类型的CIGS设备选择AC等效电路。了解每个器件的交流电气行为至关重要，因为参考厚、参考厚和钝化厚CIGS太阳能电池之间的差异尚未完全了解。分析表明，一个更简单的交流等效电路的参考CIGS设备，这是由较低的体复合薄膜CIGS太阳能电池相比，厚的。还证明了通过使用钝化层缓解分流的重要性，与两种参考器件相比，钝化器件的分流电阻增加。
Ultrathin Cu(In,Ga)Se2 (CIGS) is desired to reduce production costs of CIGS solar cells. The present work aims to study the AC electrical response of standard-thick, ultrathin and passivated ultrathin devices. Admittance measurements allow to choose the AC equivalent circuit for each type of CIGS device. It is of utmost importance to understand the AC electrical behavior of each device, as the differences between reference thick, reference ultrathin and passivated ultrathin CIGS solar cells are yet to be fully understood. The analyses show a simpler AC equivalent circuit for the reference ultrathin device, which is explained by the lowered bulk recombination for thin film CIGS solar cells when compared with thick ones. The importance of shunts mitigation by the use of a passivation layer is also demonstrated, with a shunt resistance increase for the passivation device compared to both reference devices.