Current-Induced Generation and Synchronous Motion of Highly Packed Coupled Chiral Domain Walls
Current-Induced Generation and Synchronous Motion of Highly Packed Coupled Chiral Domain Walls
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DOI：
10.1021/acs.nanolett.6b05132
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发表时间：
2017-03-01
期刊：
影响因子：
10.8
通讯作者：
Hayashi, Masamitsu
中科院分区：
文献类型：
--
作者：
del Real, Rafael P.;Raposo, Victor;Hayashi, Masamitsu
Neel型的手征畴壁出现在包括重金属（HM）和铁磁金属（FM）层的异质结构中，这是由于HM/FM界面处的Dzyaloshinskiii-Moriya（DM）相互作用。在开发基于手性畴壁的电流诱导运动的存储类存储器中，还有待观察这种畴壁可以被包装在一起的密度。在这里，我们表明，一个普遍的短程排斥，规模与DM相互作用的强度之间存在手性畴壁。两个壁之间的距离可以减少与应用程序的面外场，允许形成耦合畴壁。令人惊讶的是，这种耦合壁的电流驱动速度是独立的面外场，使操纵显着压缩耦合畴壁使用电流脉冲。此外，我们发现，一个单一的电流脉冲具有最佳的振幅可以创建大量的紧密间隔的磁畴壁。这些特征允许高度堆积的手性畴壁的电流诱导产生和同步运动，这是开发基于畴壁的存储器件所必需的关键特征。
Chiral domain walls of Neel type emerge in heterostructures that include heavy metal (HM) and ferromagnetic metal (FM) layers owing to the Dzyaloshinskii-Moriya (DM) interaction at the HM/FM interface. In developing storage class memories based on the current induced motion of chiral domain walls, it remains to be seen how dense such domain walls can be packed together. Here we show that a universal short-range repulsion that scales with the strength of the DM interaction exists among chiral domain walls. The distance between the two walls can be reduced with the application of the out-of-plane field, allowing the formation of coupled domain walls. Surprisingly, the current driven velocity of such coupled walls is independent of the out-of-plane field, enabling manipulation of significantly compressed coupled domain walls using current pulses. Moreover, we find that a single current pulse with optimum amplitude can create a large number of closely spaced domain walls. These features allow current induced generation and synchronous motion of highly packed chiral domain walls, a key feature essential for developing domain wall based storage devices.