Magneto-Impedance Effect in Amorphous Wire Magnetized with an Asymmetrical Current.
Magneto-Impedance Effect in Amorphous Wire Magnetized with an Asymmetrical Current.
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非对称电流磁化的非晶丝中的磁阻抗效应。
DOI：
10.3379/jmsjmag.19.485
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发表时间：
1995
影响因子：
--
通讯作者：
K. Mohri
中科院分区：
文献类型：
--
作者：
M. Noda;T. Kitoh;K. Inada;T. Uchiyama;K. Mohri
用非对称导线交流电流磁化FeCoSiB非晶导线，测量了其新的磁阻抗特性。当外加磁场Hex增大到各向异性场Hk时，导线电压幅值急剧增大，当外加交流偏置直流电流时，导线电压幅值随Hex逐渐减小。由于非晶丝的螺旋各向异性，在扭曲的非晶丝上施加不对称交流电流获得了非对称特性。然后，这些特性被用于制作具有一对MI元件的线性场传感器，并且没有应用偏置场。获得了脉冲响应的MI效应。在脉冲的上升和下降部分，由于脉冲电流磁化引起的导线电压随Hex急剧升高，持续时间约为350ns。脉冲响应效应将有助于建立新的磁记录和存储系统。
New magneto-impedance characteristics were measured in FeCoSiB amorphous wires magnetized with asymmetrical wire ac currents. The wire voltage amplitude sharply increased as the applied field Hex was increased up to the anisotropy field Hk, and then gradually decreased with Hex when an ac current biased with a dc current was applied through the wire. Asymmetrical characteristics were obtained by applying an asymmetrical ac current through a twisted amorphous wire, because of the wire‘s spiral anisotropy. These characteristics were then used in making a linear field sensor with a pair of MI elements and no applied bias fields. A pulse response MI effects was obtained. The wire voltage due to the pulse current magnetization sharply increased with Hex during the rising and falling parts of the pulse for about 350 ns. The pulse response MI effect will be useful in establishing new magnetic recording and memory systems.