Investigation of Leakage Current of AlGaN/GaN HEMTs Under Pinch-Off Condition by Electroluminescence Microscopy
Investigation of Leakage Current of AlGaN/GaN HEMTs Under Pinch-Off Condition by Electroluminescence Microscopy
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电致发光显微镜研究夹断条件下 AlGaN/GaN HEMT 的漏电流
DOI：
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发表时间：
2010
期刊：
影响因子：
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通讯作者：
T. Rödle
中科院分区：
文献类型：
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作者：
M. Baeumler;F. Gütle;V. Polyakov;M. Cäsar;M. Dammann;H. Konstanzer;W. Pletschen;W. Bronner;R. Quay;P. Waltereit;M. Mikulla;O. Ambacher;F. Bourgeois;R. Behtash;K. Riepe;P. J. Wel;J. Klappe;T. Rödle
从晶圆上的电致发光（EL）显微镜AlGaN/GaN高电子迁移率晶体管的泄漏电流变化超过四个数量级的结果。在关态区的集成EL强度是成正比的漏电流和独立的栅极宽度下研究的设备。集成EL漏电流依赖性的斜率由源极-漏极方向上的电场确定。对于较高的漏极偏置，GaN帽层厚度的影响很小甚至可以忽略不计。加速老化期间的应力导致漏电流和/或电场值增强区域的退化增强。
Results from on-wafer electroluminescence (EL) microscopy on AlGaN/GaN high-electron-mobility transistors with leakage currents varying over four orders of magnitude are presented. In the off-state region the integrated EL intensity is proportional to the leakage current and independent of gate width for the devices under study. The slope of the integrated EL–leakage current dependence is determined by the electrical field in the source–drain direction. The influence of the GaN cap thickness is small or even negligible for higher drain bias. Stress during accelerated aging results in enhanced degradation for areas of enhanced leakage current and/or electric field values.