Above 25 nm emission wavelength shift in blue-violet InGaN quantum wells induced by GaN substrate misorientation profiling: towards broad-band superluminescent diodes
Above 25 nm emission wavelength shift in blue-violet InGaN quantum wells induced by GaN substrate misorientation profiling: towards broad-band superluminescent diodes
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DOI：
10.1364/oe.394580
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发表时间：
2020-07-20
期刊：
影响因子：
3.8
通讯作者：
Kawakami, Y.
中科院分区：
文献类型：
--
作者：
Kafar, A.;Ishii, R.;Kawakami, Y.
我们报道了在结构的外延生长之前，通过改变GaN衬底的局域取向偏差来对InGaN量子阱进行空间修饰的深入研究。获得了发射波长超过25 nm的移动，这归因于量子阱中铟含量的变化。这种有源区有望拓宽(In，Al，Ga)N超辐射二极管的发射光谱。我们观察到光强随取向错误而变化，在0.5度到2度之间稳定，在2度以上下降。这一关系可作为今后器件设计的基础。(C)OSA开放获取出版协议条款下的2020年美国光学学会
We report a thorough study of InGaN quantum wells spatially modified by varying the local misorientation of the GaN substrate prior to the epitaxial growth of the structure. More than 25 nm shift of emission wavelength was obtained, which is attributed to indium content changes in the quantum wells. Such an active region is promising for broadening of the emission spectrum of (In,Al,Ga)N superluminescent diodes. We observed that the light intensity changes with misorientation, being stable around 0.5 degrees to 2 degrees and decreasing above 2 degrees. This relation can be used as a base for future device designing. (C) 2020 Optical Society of America under the terms of the OSA Open Access Publishing Agreement