Electrical properties of amorphous and crystalline InSb and InAs thin films
Electrical properties of amorphous and crystalline InSb and InAs thin films
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非晶态和晶态 InSb 和 InAs 薄膜的电学特性
DOI：
10.1016/0022-3093(80)90187-8
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发表时间：
1980
影响因子：
3.5
通讯作者：
P. Reddy
中科院分区：
文献类型：
--
作者：
Anila Sharma;P. Reddy
通过使用“闪蒸”技术，在金封玻璃、新劈开的云母和 NaCl 基板上形成锑化铟 (0.02–0.26 μm) 和砷化铟 (0.03–0.3 μm) 的非晶态薄膜。当观察到非晶态→晶态转变时，对这些薄膜进行后沉积热处理。这种转变的特点是薄膜电阻在特定温度下根据厚度突然大幅下降。这种转变通过热处理前后薄膜上获得的透射电子显微照片和衍射图案得到证实。对于我们研究中涉及的厚度范围，锑化铟的转变温度介于 495–525 K 之间，砷化铟的转变温度介于 550–575 K 之间。电导率测量显示高温区域中的温度依赖性激活和低温区域中的跳跃传导（莫特理论）。计算并给出了不同厚度下不同温度下的活化能。虽然在沉积薄膜中没有观察到霍尔迁移率，但在退火厚膜中观察到非常低的迁移率 (t> 2000 Å)。研究发现，厚度范围为 1000-2300 埃的 InSb 薄膜的热电势为 0.075-0.17 mV/K，而厚度范围为 1250-2500 埃的 InAs 薄膜的热电势为 0.09-0.27 mV/K。这些测量表明电导率为 n 型，并支持在低温电导率测量中观察到的跳跃传导机制。
Amorphous films of indium antimonide (0.02–0.26 μm) and indium arsenide (0.03–0.3 μm) were formed on goldseal glass, freshly cleaved mica and NaCl substrates by using a “flash evaporation” technique. The post-deposition heat treatment was carried out on these films when the amorphous → crystalline transformation was observed. The transformation was characterized by a sudden and large fall in the resistance of the film at a particular temperature depending on the thickness. This transformation was confirmed by transmission electron micrographs and diffraction patterns obtained on the films before and after heat treatment. The transformation temperatures lie between 495–525 K for indium antimonide and 550–575 K for indium aresenide, for the thickness range involved in our investigations. The electrical conductivity measurements showed a temperature dependent activation in the high temperature region and hopping conduction in the low temperature region (Mott's theory). The activation energies, at different temperatures for various thicknesses were calculated and presented. While no Hall mobility could be observed in as-deposited films, very low mobilities were observed in annealed thick films (t> 2000 Å). Thermoelectric power for InSb films was found to vary from 0.075–0.17 mV/K for films of thickness ranging from 1000–2300 Å, whereas for InAs films, its value varied from 0.09–0.27 mV/K for the thickness range, 1250–2500 Å. These measurements indicated the conductivity to be n-type and supported the hopping conduction mechanism observed in low temperature conductivity measurements.