Photoluminescence Quenching in Polysilanes by Fullerene Doping and Effective Photoinduced Charge Transfer Depending on Aromatic Side Group

Photoluminescence Quenching in Polysilanes by Fullerene Doping and Effective Photoinduced Charge Transfer Depending on Aromatic Side Group
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通过富勒烯掺杂实现聚硅烷中的光致发光猝灭以及取决于芳族侧基的有效光致电荷转移

DOI:
10.1143/jjap.34.l141
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发表时间:
1995
影响因子:
1.5
通讯作者:
H. Kojima
H. Kojima
中科院分区:
物理与天体物理4区
文献类型:
--
作者:
K. Yoshino;K. Yoshimoto;M. Hamaguchi;T. Kawai;A. Zakhidov;H. Ueno;M. Kakimoto;H. Kojima

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在C60掺杂下,含芳香族侧基的聚硅烷的光致发光被强烈猝灭,而含饱和碳氢侧基的聚硅烷则未观察到明显的猝灭效应。通过考虑芳香族侧基作为光诱导电子从主链聚硅烷电子态转移到C60分子的介体的作用,解释了这些结果。
Photoluminescence of polysilanes with aromatic side groups has been found to be strongly quenched upon C60 doping, in contrast to the case of polysilanes with saturated hydrocarbon side groups in which a clear quenching effect has not been observed. These results have been interpreted by considering the role of the aromatic side group as a mediator for photoinduced electron transfer from electronic states of the main chain polysilanes to the C60 molecule.
DOI: --
发表时间: 1986
期刊: --
影响因子: --
作者:
T. Skotheim;R. Elsenbaumer;J. Reynolds
通讯作者: T. Skotheim;R. Elsenbaumer;J. Reynolds