Determination of the interface state density of the In/p-Si Schottky diode by conductance and capacitance–frequency characteristics
Determination of the interface state density of the In/p-Si Schottky diode by conductance and capacitance–frequency characteristics
复制标题
DOI：
10.1016/j.physb.2006.12.035
复制
发表时间：
2007-04
影响因子：
2.8
通讯作者：
N. Tuğluoğlu;F. Yakuphanoglu;S. Karadeniz
中科院分区：
文献类型：
--
作者：
N. Tuğluoğlu;F. Yakuphanoglu;S. Karadeniz
