Temperature dependence of large positive magnetoresistance in hybrid ferromagnetic/semiconductor devices
Temperature dependence of large positive magnetoresistance in hybrid ferromagnetic/semiconductor devices
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DOI：
10.1063/1.121164
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发表时间：
1998-06
影响因子：
4
通讯作者：
N. Overend;A. Nogaret;B. Gallagher;P. Main;M. Henini;C. Marrows;M. Howson;S. Beaumont
中科院分区：
文献类型：
--
作者：
N. Overend;A. Nogaret;B. Gallagher;P. Main;M. Henini;C. Marrows;M. Howson;S. Beaumont
We investigate a new type of magnetoresistance(MR) in which the resistivity of a near-surface two-dimensional electron gas is controlled by the magnetization of a submicron ferromagneticgrating defined on the surface of the device. We observe an increase in resistance of up to ∼1500% at a temperature of 4 K and ∼1% at 300 K. The magnitude and temperature dependence of the MR are well accounted for by a semiclassical theory. Optimization of device parameters is expected to increase considerably the magnitude of the room temperature MR.
