Development of dry‐nano‐polishing technique using reactive ion etching for ultra thin titanium wafer
Development of dry‐nano‐polishing technique using reactive ion etching for ultra thin titanium wafer
复制标题
超薄钛片反应离子刻蚀干法纳米抛光技术的开发
DOI：
10.1002/ecj.12317
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发表时间：
2021
影响因子：
0.3
通讯作者：
Takashi Abe
中科院分区：
文献类型：
--
作者：
Chino Teruya;Watanabe YutaYosuke Tsukiyama; Masayoshi Sohgawa;Takashi Abe
在这项研究中，我们开发了一种使用反应离子刻蚀的超薄钛晶片干法纳米抛光技术。利用SF6 /C4 F8气体对钛表面进行反应离子刻蚀，对钛表面进行光致抗蚀剂抛光。通过改变温度和SF_6/C_4F_8气体的比例来调节钛和光刻胶的蚀刻速度以使其彼此接近。通过在这些条件下蚀刻钛，抗蚀剂的平滑表面形状被转移到钛。通过与光刻相结合，可以抛光特定部件。
In this study, we developed a dry‐nano‐polishing technique using reactive ion etching for ultra thin titanium wafer. The surface of titanium coated with photoresist is polished by reactive ion etching using SF6 /C4F8 gas. Etching speed of titanium and photoresist were adjusted to close to each other by changing temperature and ratio of SF6 /C4F8 gas. By etching titanium under these conditions, the smooth surface shape of the resist was transferred to titanium. By combining with photolithography, it is possible to polish a specific part.