Evidence of space-charge-limited current in amorphous silicon Schottky diodes
Evidence of space-charge-limited current in amorphous silicon Schottky diodes
复制标题
非晶硅肖特基二极管中空间电荷限制电流的证据
DOI：
10.1109/edl.1980.25288
复制
发表时间：
1980
影响因子：
4.9
通讯作者：
S. Fonash
中科院分区：
文献类型：
--
作者：
S. Ashok;A. Lester;S. Fonash
钯/非晶硅（a-SiHx）肖特基势垒二极管在30至130°C的温度范围内具有超线性暗正向电流-电压（I-V）特性。结果是一致的预期行为的空间电荷限制的电流分布陷阱的存在下。由I-V数据推导出陷阱参数。
Palladium/amorphous silicon (a-SiHx) Schottky barrier diodes have been found to exhibit superlinear dark forward current-voltage (I-V) characteristics over the temperature range 30 to 130°C. The results are consistent with expected behavior for space-charge-limited current in the presence of distributed traps. The trap parameters are deduced from I-V data.