Reduction of threading dislocations in nonpolar 4H-AlN on 4H-SiC (110) grown by molecular-beam epitaxy with slightly Al-rich conditions
Reduction of threading dislocations in nonpolar 4H-AlN on 4H-SiC (110) grown by molecular-beam epitaxy with slightly Al-rich conditions
复制标题
微富铝条件下分子束外延生长的 4H-SiC (110) 上非极性 4H-AlN 中螺纹位错的减少
DOI：
10.1002/pssc.200674857
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发表时间：
2007
期刊：
影响因子：
--
通讯作者：
T. Kimoto
中科院分区：
文献类型：
--
作者：
M. Horita;J. Suda;T. Kimoto
本文研究了用分子束外延技术在（1120）4 H-SiC a面衬底上生长AlN。在稍富Al的条件下，在（1120）4 H-SiC衬底上生长了非极性的（1120）4 H-AlN。当在稍微富氮的条件下进行生长时，获得具有高堆垛层错密度的（1120）2 H-AlN。通过在略微富铝的条件下生长，实现了降低的缺陷密度，如堆垛层错和穿透位错。最佳样品的层错密度为2 × 105 cm-1，部分和完全穿透位错密度分别为7 × 107 cm-2和1 × 107 cm-2。
Growth of AlN on (1120) 4H-SiC a-plane face substrates by molecular-beam epitaxy has been investigated. Nonpolar (1120) 4H-AlN was isopolytypically grown on (1120) 4H-SiC substrates under slightly Al-rich conditions. When growth was performed under slightly N-rich conditions, (1120) 2H-AlN with high stacking fault density was obtained. A reduced density of defects such as stacking faults and threading dislocations was achieved by growing in slightly Al-rich conditions. For the best sample, the stacking fault density was 2 x 10 5 cm -1 , and the partial and perfect threading dislocation densities were 7 x 10 7 cm -2 and 1 x 10 7 cm -2 , respectively.