Low Gain Avalanche Detectors (LGAD) for particle physics and synchrotron applications
Low Gain Avalanche Detectors (LGAD) for particle physics and synchrotron applications
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DOI：
10.1088/1748-0221/13/03/c03014
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发表时间：
2018-03-01
影响因子：
1.3
通讯作者：
Ashby, J.
中科院分区：
文献类型：
--
作者：
Moffat, N.;Bates, R.;Ashby, J.
介绍了一种新的雪崩硅探测器概念，其增益在10的范围内，称为低增益雪崩探测器，LGAD。探测器的特性通过全过程模拟来模拟，以获得所需的掺杂分布，其展示了用于X射线探测的高击穿电压（500 V）和在200 V反向偏压下10的增益的期望操作特性。介绍了美国Micron半导体公司研制的第一个低增益雪崩探测器。倍增结的掺杂分布用西姆斯测量，并通过模拟整个制造过程来再现，这使得制造过程能够进一步发展。探测器是300 μ m厚的p型硅，电阻率为8.5 k Ω cm，在116 V时完全耗尽。给出了电流特性，并证明了在20 ℃下测量的击穿电压超过500 V，击穿前电流密度为40至100 nAcm（-2）。LGAD的增益已被测量与红色激光（660 nm），并显示为9和12之间的外部偏置电压范围从150 V至300 V。
A new avalanche silicon detector concept is introduced with a low gain in the region of ten, known as a Low Gain Avalanche Detector, LGAD. The detector's characteristics are simulated via a full process simulation to obtain the required doping profiles which demonstrate the desired operational characteristics of high breakdown voltage (500 V) and a gain of 10 at 200V reverse bias for X-ray detection. The first low gain avalanche detectors fabricated by Micron Semiconductor Ltd are presented. The doping profiles of the multiplication junctions were measured with SIMS and reproduced by simulating the full fabrication process which enabled further development of the manufacturing process. The detectors are 300 mu m thick p-type silicon with a resistivity of 8.5 k Omega cm, which fully depletes at 116V. The current characteristics are presented and demonstrate breakdown voltages in excess of 500V and a current density of 40 to 100 nAcm(-2) before breakdown measured at 20 degrees C. The gain of the LGAD has been measured with a red laser (660 nm) and shown to be between 9 and 12 for an external bias voltage range from 150V to 300V.