(Invited) Mid-Infrared Colloidal Quantum Dot Based Nanoelectronics and Nano-Optoelectronics
(Invited) Mid-Infrared Colloidal Quantum Dot Based Nanoelectronics and Nano-Optoelectronics
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（特邀）中红外胶体量子点纳米电子学与纳米光电子学
DOI：
10.1149/09201.0011ecst
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发表时间：
2019
期刊：
影响因子：
--
通讯作者：
Ko, Dong-Kyun
中科院分区：
文献类型：
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作者：
Hafiz, Shihab Bin;Scimeca, Michael R.;Sahu, Ayaskanta;Ko, Dong-Kyun
由于其溶液可加工性，由胶体量子点（CQD）制造的电子和光电器件为实现低成本器件提供了一条有前途的途径，并且大大简化了器件制造过程。 CQD技术将带来的影响预计将是巨大的，特别是在目前由外延半导体技术主导的中红外应用领域。在这项工作中，我们介绍了新一代红外 CQD，即 Ag2Se CQD，最近发现它在中红外区域表现出明显的光学吸收。我们报告了溶液处理光电导光电探测器的制造，并讨论了我们对设备的电子和光电特性的分析。我们还证明了中红外光电探测的可行性，在室温操作下，在 4 µm 处测得的峰值响应率为 0.16 mA/W。
Electronic and optoelectronic devices fabricated from colloidal quantum dots (CQDs) provide a promising path toward realizing low-cost devices with greatly simplified device fabrication procedure, owing to their solution-processability. The impact that CQD technology would bring is expected to be significant, especially in the mid-infrared application areas, which is currently dominated by epitaxial semiconductor technologies. In this work, we introduce a new generation of infrared CQDs, namely Ag2Se CQDs, which has been recently uncovered to show distinct optical absorption in the mid-infrared. We report on the fabrication of solution-processed photoconductive photodetectors and discuss our analyses on the electronic and optoelectronic characteristics of our devices. We also demonstrate the feasibility of mid-infrared photodetection with a measured peak responsivity of 0.16 mA/W at 4 µm under room temperature operation.