Strain modulation using defects in two-dimensional MoS2
Strain modulation using defects in two-dimensional MoS2
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DOI：
10.1103/physrevb.102.085421
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发表时间：
2020-08-21
影响因子：
3.7
通讯作者：
Aitkaliyeva, Assel
中科院分区：
文献类型：
--
作者：
Burns, Kory;Tan, Anne Marie Z.;Aitkaliyeva, Assel
我们研究了MoS2中应变的性质，并将其与缺陷类型和密度相关联，同时系统地评估了这种低维材料对He和Au离子辐照的耐受性。通过一系列的理论预测和实验观察，我们确定了MoS_2从晶态到非晶态转变的开始，并确定硫空位是辐照过程中引入的最有利的缺陷。我们注意到拉伸应变和压缩应变的存在，这取决于引入到晶格中的缺陷的类型，并随着通量的增加而变化。结果表明，缺陷可以用来调节二维材料的应变，并为利用外界激励来控制低维材料的性能提供了一条激发途径。
We investigate the nature of strain in MoS2 and correlate it to defect types and densities, while systematically assessing the tolerance of this low dimensional material to He and Au ion irradiations. Through a series of theoretical predictions and experimental observations, we establish the onset of the crystalline-to-amorphous transition in MoS2 and identify sulfur vacancies as the most favorable defects introduced during irradiation. We note the presence of both tensile and compressive strains, which depend on the types of defects introduced into the lattice and vary with increasing fluence. The results show that defects can be used to tune strain in two-dimensional materials and provide an exciting pathway for using external stimuli to control properties of low dimensional materials.