Light emission from silicon in photonic crystal nanocavity
Light emission from silicon in photonic crystal nanocavity
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DOI：
10.1109/jstqe.2008.918941
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发表时间：
2008-07-01
影响因子：
4.9
通讯作者：
Noda, Susumu
中科院分区：
文献类型：
--
作者：
Fujita, Masayuki;Tanaka, Yoshinori;Noda, Susumu
我们将光子晶体引入到单晶硅平板中，以操纵光发射。当无缺陷光子晶体的晶格常数与介质中的光波长匹配时，从硅发射的光在逃逸光锥内的光子带边缘处被共振提取。当晶格常数大于波长时，光子带的布里渊区折叠也允许光被提取;由于内部光衍射到光锥中，我们实现了强度增强了约20倍。我们还在具有较小晶格常数的光子晶体中创建了一个点缺陷，该点缺陷用作纳米腔并与硅发射极强烈相互作用。观察到四个腔模式，具有不同的Q因子和发射模式。利用共振波长和偏振态对模式阶数进行了分配。在室温下观察到的发射增强了一个因素，类似于30相比，未处理的区域的绝缘体上硅。我们的研究表明，在硅中采用光子晶体纳米腔可以大大提高光提取效率，辐射图案的特性，和内部量子效率。
We have introduced a photonic crystal into a single-crystal silicon slab in order to manipulate the light emission. When the lattice constant of a defect-free photonic crystal matches the wavelength of light in the medium, the light emitted from the silicon is resonantly extracted at the photonic band edge within the escape light cone. When the lattice constant is larger than the wavelength, Brillouin zone folding of the photonic band also allows the light to be extracted; we achieved an intensity that was enhanced by a factor of similar to 20 due to the diffraction of internal light into the light cone. We have also created a point defect in photonic crystals with smaller lattice constants that functions as a nanocavity and strongly interacts with the silicon emitter. Four cavity modes were observed, with different Q-factors and emission patterns. The mode orders were assigned using the resonant wavelengths and polarizations. The observed emission at room temperature was enhanced by a factor of similar to 30 in comparison to that of an unprocessed area of silicon-on-insulator. Our study demonstrates that employing a photonic crystal nanocavity in silicon can greatly improve the light extraction efficiency, the characteristics of the radiation pattern, and the internal quantum efficiency.