Growth of epitaxial films
Growth of epitaxial films
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外延膜的生长
DOI：
10.1088/0953-2048/10/12/006
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发表时间：
1997
期刊：
影响因子：
--
通讯作者：
P. Reiche
中科院分区：
文献类型：
--
作者：
D. Schlom;S. Knapp;S. Wozniak;Ling;J. Park;Y. Liu;M. Hawley;G. Brown;A. Dabkowski;H. Da̧bkowska;R. Uecker;P. Reiche
我们用脉冲激光淀积法（PLD）生长了n = 1，2和n = 1的外延薄膜，并通过选择合适的衬底来控制它们的取向。获得纯相薄膜的生长条件已被绘制出来。电阻率与温度的测量结果表明，a轴和c轴薄膜的金属，但不是超导的。后者可能是由于存在低水平的杂质，这些杂质在通过PLD生长这些膜所涉及的靶制备过程中难以避免。
We have grown epitaxial films, n = 1, 2 and , by pulsed laser deposition (PLD) and controlled their orientation by choosing appropriate substrates. The growth conditions yielding phase-pure films have been mapped out. Resistivity versus temperature measurements show that both a-axis and c-axis films of are metallic, but not superconducting. The latter is probably due to the presence of low-level impurities that are difficult to avoid given the target preparation process involved in growing these films by PLD.