Effect of crystal quality on performance of spin-polarized photocathode
Effect of crystal quality on performance of spin-polarized photocathode
复制标题
DOI：
10.1063/1.4902337
复制
发表时间：
2014-11
影响因子：
4
通讯作者：
X. Jin;B. Ozdol;M. Yamamoto;A. Mano;N. Yamamoto;Y. Takeda
中科院分区：
文献类型：
--
作者：
X. Jin;B. Ozdol;M. Yamamoto;A. Mano;N. Yamamoto;Y. Takeda
制备了厚度达90对的GaAs/GaAsP应变补偿超晶格。透射电子显微镜观察显示，SL具有高的晶体质量，SL层中引入的应变在整个SL层中是固定的。随着SL对数的增加，应变补偿SL的退极化比传统的应变SL表现出更少。尽管晶体质量很高，但应变补偿SL也随着SL对的增加而保持轻微去极化，并且自旋极化的降低有助于自旋弛豫时间。24-一对GaAs/GaAsP应变补偿SL的最大自旋极化率为92%，量子效率为1.6%。
GaAs/GaAsP strain-compensated superlattices (SLs) with thickness up to 90-pair were fabricated. Transmission electron microscopy revealed the SLs are of high crystal quality and the introduced strain in SLs layers are fixed in the whole SL layers. With increasing SL pair number, the strain-compensated SLs show a less depolarization than the conventional strained SLs. In spite of the high crystal quality, the strain-compensated SLs also remain slightly depolarized with increasing SL pairs and the decrease in spin-polarization contributes to the spin relaxation time. 24-pair of GaAs/GaAsP strain-compensated SL demonstrates a maximum spin-polarization of 92% with a high quantum efficiency of 1.6%.