Observation of ferromagnetism at room temperature in ZnO thin films
Observation of ferromagnetism at room temperature in ZnO thin films
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DOI：
10.1088/0953-8984/19/3/036219
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发表时间：
2007-01-24
影响因子：
2.7
通讯作者：
Brize, Virginie
中科院分区：
文献类型：
--
作者：
Hong, Nguyen Hoa;Sakai, Joe;Brize, Virginie
在激光烧蚀的ZnO薄膜中观察到了室温铁磁性（FM）。在这种类型的化合物中的FM不源于氧空位的情况下的TiO 2和HfO 2膜，但从Zn网站上的缺陷。非常薄的膜的磁化强度比较厚的膜的磁化强度大得多，这表明缺陷必须主要位于膜和衬底之间的表面和/或界面处。Fe掺杂ZnO和Mn掺杂ZnO薄膜的结果清楚地表明，金属过渡掺杂在引入磁性ZnO中不起任何重要作用。
Room-temperature ferromagnetism (FM) has been observed in laser-ablated ZnO thin films. The FM in this type of compound does not stem from oxygen vacancies as in the case of TiO2 and HfO2 films, but from defects on Zn sites. Magnetization of very thin films is much larger than that of the thicker films, showing that defects must be located mostly at the surface and/or the interface between the film and the substrate. Results on Fe-doped ZnO and Mn-doped ZnO films reveal clearly that the metal-transition doping does not play any essential role in introducing the magnetism in ZnO.