Metal–insulator–semiconductor Schottky barrier structures fabricated using interfacial BN layers grown on GaN and SiC for optoelectronic device applications
Metal–insulator–semiconductor Schottky barrier structures fabricated using interfacial BN layers grown on GaN and SiC for optoelectronic device applications
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使用在 GaN 和 SiC 上生长的界面 BN 层制造的金属-绝缘体-半导体肖特基势垒结构，用于光电器件应用
DOI：
10.1116/1.581802
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发表时间：
1999
期刊：
影响因子：
--
通讯作者：
A. Bensaoula
中科院分区：
文献类型：
--
作者：
D. Starikov;N. Badi;I. Berishev;N. Medelci;O. Kameli;M. Sayhi;V. Zomorrodian;A. Bensaoula
研究了在氮化镓和6H-SiC上采用高稳定界面BN层的金属-绝缘体-半导体肖特基势垒结构。如前所述，当基于6H-SiC和GaN时，用Ti触点制造的这种结构分别能够承受高达350°C和600°C。在这项工作中，我们使用界面BN层和光学透明的Au触点制作了二极管结构。研究了GaN和6H-SiC上的可见盲光敏结构和6H-SiC上的预击穿发光二极管（LED）结构。在200 ~ 400 nm范围内测量了光敏结构的辐射灵敏度和光谱灵敏度。光响应测量测定的GaN基和sic基样品的势垒高度分别为2.7和2.88 eV。通过透明Au电极测量的6H-SiC和p- gan基预击穿LED结构的光谱扩展到紫外区。6h - sic基LED结构的光发射功率…
Metal–insulator–semiconductor Schottky barrier structures on GaN and 6H-SiC using highly stable interfacial BN layers have been investigated. As reported earlier, such structures fabricated with Ti contacts are capable of withstanding up to 350 and 600 °C when based on 6H-SiC and GaN, respectively. In this work we fabricated diode structures using interfacial BN layers and optically transparent Au contacts. Visible–blind photosensitive structures on GaN and 6H-SiC and prebreakdown light-emitting diode (LED) structures on 6H-SiC have been characterized. The radiant and spectral sensitivities of the photosensitive structures were measured in the range of 200–400 nm. The potential barrier heights determined from photoresponse measurements were 2.7 and 2.88 eV for GaN- and SiC-based samples, respectively. The spectrum of 6H-SiC and p-GaN-based prebreakdown LED structures measured through transparent Au electrodes extended to the ultraviolet region. The optical emission power of the 6H-SiC-based LED structures...