Continuous wave operation of current injected GaN vertical cavity surface emitting lasers at room temperature
Continuous wave operation of current injected GaN vertical cavity surface emitting lasers at room temperature
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DOI：
10.1063/1.3483133
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发表时间：
2010-08-16
影响因子：
4
通讯作者：
Wang, Shing-Chung
中科院分区：
文献类型：
--
作者：
Lu, Tien-Chang;Chen, Shih-Wei;Wang, Shing-Chung
报道了室温下连续波激光对GaN基垂直腔面发射激光器的作用。该激光器结构由10对Ta（2）O（5）/SiO（2）分布布拉格反射器（DBR）、7 μ m厚的光腔、10对InGaN/GaN多量子威尔斯阱和29对AlN/GaN DBR组成。激光器的阈值电流约为9.7mA，对应于约12.4kA/cm（2）的电流密度，在300 K下的开启电压约为4.3V。激光波长为412 nm，线宽约为0.5 nm。测得自发辐射耦合效率因子约为5 × 10 ~（-3），偏振度约为55%。激光束具有约8度的窄发散角。(C)2010年美国物理学会。[doi：10.1063/1.3483133]
We report the demonstration of the continuous wave laser action on GaN-based vertical cavity surface emitting lasers at room temperature. The laser structure consists of a ten-pair Ta(2)O(5)/SiO(2) distributed Bragg reflector (DBR), a 7 lambda-thick optical cavity, ten-pairs InGaN/GaN multiquantum wells with an AlGaN electron blocking layer, and a 29-pair AlN/GaN DBR. The laser has a threshold current of about 9.7 mA corresponding to the current density of about 12.4 kA/cm(2) and a turn-on voltage about 4.3 V at 300 K. The lasing wavelength was 412 nm with a linewidth of about 0.5 nm. A spontaneous emission coupling efficiency factor of about 5x10(-3) and the degree of polarization of about 55% were measured, respectively. The laser beam has a narrow divergence angle of about 8 degrees. (C) 2010 American Institute of Physics. [doi:10.1063/1.3483133]