Investigation of morphology evolution of the In‐rich inclusions and the corresponding defects in InP single crystals

Investigation of morphology evolution of the In‐rich inclusions and the corresponding defects in InP single crystals
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DOI:
10.1002/crat.201500107
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发表时间:
2015-08
影响因子:
1.5
通讯作者:
S. Wang;N. Sun;L. Gao;Y. L. Shi;H. Shao;X. Li;Yan Wang;L. Fu;H. Liu;T. Sun
S. Wang;N. Sun;L. Gao;Y. L. Shi;H. Shao;X. Li;Yan Wang;L. Fu;H. Liu;T. Sun
中科院分区:
材料科学4区
文献类型:
--
作者:
S. Wang;N. Sun;L. Gao;Y. L. Shi;H. Shao;X. Li;Yan Wang;L. Fu;H. Liu;T. Sun

文献摘要

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Submicron, micron and millimeter‐scale In‐rich inclusions with different polyhedral morphologies are observed, which are directionally embedded in the InP matrix along direction. The arrangement direction and morphological change of the In‐rich inclusions at different scales are investigated to reveal their morphology evolution. The relative size of the facets ({100} and {111}P/In) bounding the polyhedral In‐rich inclusions is different from the reported results in other crystals, especially when the size of In‐rich inclusions is up to millimeter‐scale. The growth rate dispersion effect and the initial morphologies of the In‐rich droplets have an obvious effect on the final shape of the In‐rich inclusions. Dislocation enrichment surrounding the In‐rich inclusion is observed, which is contributed to the volume expansion of liquid‐solid phase transition and the difference of the thermal expansion coefficient and thermal conductivity between In‐rich droplet and InP matrix. The size and shape of the dislocation enriched region are closely related to the size and shape of the originating In‐rich droplet and the growth condition.