Laser-Induced Electronic Emissions of Si Atoms from Si(100) Surfaces
Laser-Induced Electronic Emissions of Si Atoms from Si(100) Surfaces
复制标题
Si(100) 表面硅原子的激光诱导电子发射
DOI：
10.1143/jjap.32.l859
复制
发表时间：
1993
影响因子：
1.5
通讯作者：
Noriaki Itoh Noriaki Itoh
中科院分区：
文献类型：
--
作者：
J. Kanasaki;I. Yu;Yasuo Nakai Yasuo Nakai;Noriaki Itoh Noriaki Itoh
我们对 2.48 eV 激光脉冲照射下发射的 Si(100) 表面的 Si° 原子进行了高灵敏度测量。结果表明了从 GaP 和 GaAs 表面发射 Ga° 原子所获得的电子源缺陷引发发射的所有特征：我们发现产率是注量的超线性函数，并且随着激光脉冲的重复照射先快速然后缓慢下降。发现消除快速衰变成分后的发射率通过亚单层溴原子的沉积而增强。
We have carried out highly sensitive measurements of Si° atoms from the Si(100) surfaces emitted by irradiation with 2.48 eV laser pulses. The results indicate all characteristics of the defect-initiated emissions of electronic origin obtained for the emission of Ga° atoms from GaP and GaAs surfaces: we found that the yield is a superlinear function of the fluence and decreases first rapidly and then slowly as the irradiation with laser pulses is repeated. The emission yield after eliminating the rapidly decaying component is found to be enhanced by deposition of submonolayer Br atoms.