The effects of LT AlN buffer thickness on the optical properties of AlGaN grown by MOCVD and Al composition inhomogeneity analysis
The effects of LT AlN buffer thickness on the optical properties of AlGaN grown by MOCVD and Al composition inhomogeneity analysis
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DOI：
10.1088/0022-3727/40/4/031
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发表时间：
2007-02
期刊：
影响因子：
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通讯作者：
X. Wang;D. G. Zhao;U. Jahn;K. Ploog;D. Jiang;H. Yang;J. W. Liang
中科院分区：
文献类型：
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作者：
X. Wang;D. G. Zhao;U. Jahn;K. Ploog;D. Jiang;H. Yang;J. W. Liang
We have investigated the growth of AlGaN epilayers on a sapphire substrate by metalorganic chemical vapour deposition using various low-temperature (LT) AlN buffer thicknesses. Combined scanning electron microscopy and cathodoluminescence investigations reveal the correlation between the surface morphology and optical properties of AlGaN films in a microscopic scale. It is found that the suitable thickness of the LT AlN buffer for high quality AlGaN growth is around 20 nm. The Al compositional inhomogeneity of the AlGaN epilayer is attributed to the low lateral mobility of Al adatoms on the growing surface.
