Multi-level operation of three-dimensionally stacked non-volatile ferroelectric polymer memory with high-performance hole-injection layer
Multi-level operation of three-dimensionally stacked non-volatile ferroelectric polymer memory with high-performance hole-injection layer
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DOI：
10.1016/j.orgel.2019.105394
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发表时间：
2019-12
影响因子：
3.2
通讯作者：
Sun Kak Hwang;Kang Lib Kim;Suk Man Cho;T. Park;Beomjin Jeong;Insung Bae;Cheolmin Park
中科院分区：
文献类型：
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作者：
Sun Kak Hwang;Kang Lib Kim;Suk Man Cho;T. Park;Beomjin Jeong;Insung Bae;Cheolmin Park
通过插入能够降低注入势垒的中间层，有效地增强了场效应晶体管（FET）中从源电极到半导体沟道的载流子注入，从而产生具有大大增加的导通电流的器件。在这项研究中，我们展示了一种非易失性垂直沟道（VC）铁电场效应晶体管（FeFET）存储器的基础上铁电极化开关的铁电聚合物聚（偏氟乙烯-三氟乙烯）（PVDF-TrFE）作为栅极绝缘体与薄MoO 3夹层。由于空穴容易通过MoO 3中间层注入到FeFET的半导体沟道中，饱和导通电流显著增加，从而产生大的ON/OFF存储裕度。因此，优化的VC-FeFET的非易失性存储器工作在±25 V的编程电压与最大ON/OFF电流裕度为103，可靠的时间依赖性数据保持超过1年，和写/擦除耐久性为105个周期。此外，通过顺序堆叠三个阵列的VC-FeFET与空穴注入中间层，我们制造了三维（3D）堆叠的VC-FeFET。每个器件都有足够的ON/OFF电流比用于多级存储器操作，其中四个不同的状态被重复编程和擦除，具有长期的数据保留和可靠的循环耐久性。
Carrier injection from the source electrode to the semiconducting channel in a field-effect transistor (FET) is efficiently enhanced by inserting an interlayer capable of reducing the injection barrier, yielding a device with a greatly increased ON current. In this study, we demonstrated a non-volatile vertical-channel (VC) ferroelectric field effect transistor (FeFET) memory based on ferroelectric polarization switching of a ferroelectric polymer poly(vinylidene fluoride-trifluoroethylene) (PVDF-TrFE) as a gate insulator with a thin MoO3interlayer. Owing to the facile hole injection through the MoO3interlayer to a semiconducting channel of the FeFET, the saturated ON current was significantly increased, giving rise to a large ON/OFF memory margin. Optimization of the VC-FeFET thus led to a non-volatile memory operating at a programming voltage of ±25 V with a maximum ON/OFF current margin of 103, reliable time-dependent data retention for more than 1 year, and write/erase endurance for 105cycles. Furthermore, by sequentially stacking three arrays of VC-FeFETs with the hole-injection interlayers, we fabricated three-dimensionally (3D) stacked VC-FeFETs. Each device had a sufficient ON/OFF current ratio for multi-level memory operation, in which four distinct states were repetitively programmed and erased with long-term data retention and reliable cycle endurance.