Preparation and application in p–n homojunction diode of p-type transparent conducting Ga-doped SnO2 thin films
Preparation and application in p–n homojunction diode of p-type transparent conducting Ga-doped SnO2 thin films
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DOI:
10.1016/j.tsf.2010.04.063
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发表时间:
2010-07
期刊:
影响因子:
2.1
通讯作者:
Tieying Yang;X. Qin;Huan-hua Wang;Q. Jia;R. Yu;Baoyi Wang;Jiaou Wang;K. Ibrahim;Xiaoming Jiang;Qing(何庆) He
中科院分区:
文献类型:
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作者:
Tieying Yang;X. Qin;Huan-hua Wang;Q. Jia;R. Yu;Baoyi Wang;Jiaou Wang;K. Ibrahim;Xiaoming Jiang;Qing(何庆) He