Photoluminescence from Vacancy‐Containing Defects in GaN
Photoluminescence from Vacancy‐Containing Defects in GaN
复制标题
GaN 中含有缺陷的空位的光致发光
DOI：
10.1002/pssa.202200402
复制
发表时间：
2022
期刊：
影响因子：
--
通讯作者：
Reshchikov, Michael A.
中科院分区：
文献类型：
--
作者：
Reshchikov, Michael A.
回顾了 GaN 中与涉及氮或镓空位 (VNor VGa) 的点缺陷相关的光致发光 (PL) 能带。含 VN 的缺陷，包括孤立的 VN 及其与受主的复合物，经常在半绝缘 GaN 的 PL 中观察到，并导致绿带（GL2）和红带（RL2 系列）。通过氨热法生长的n型GaN中大量形成了VGa与氢和氧的配合物。其中一些配合物负责 PL 光谱红黄色区域的 PL 带。
Photoluminescence (PL) bands in GaN associated with point defects involving nitrogen or gallium vacancy (VNor VGa) are reviewed. The VN‐containing defects, including the isolated VNand its complexes with acceptors, are often observed in PL from semi‐insulating GaN and are responsible for the green (GL2) and red (the RL2 family) bands. The complexes of the VGawith hydrogen and oxygen are abundantly formed in n‐type GaN grown by the ammonothermal method. Some of these complexes are responsible for PL bands in the red‐yellow region of the PL spectrum.