Conductance and Fano factor in normal/ferromagnetic/normal bilayer graphene junction
Conductance and Fano factor in normal/ferromagnetic/normal bilayer graphene junction
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DOI：
10.1088/0953-8984/26/25/255302
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发表时间：
2014-06
期刊：
影响因子：
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通讯作者：
Z. Rashidian;F. Mojarabian;Parvin Bayati;G. Rashedi;Akiko Ueda;T. Yokoyama
中科院分区：
文献类型：
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作者：
Z. Rashidian;F. Mojarabian;Parvin Bayati;G. Rashedi;Akiko Ueda;T. Yokoyama
我们从理论上研究了双层石墨烯结的输运性质，其中铁磁条附着在石墨烯片的中间区域。在这些结中，我们可以通过利用层间偏压和层上感应的交换场来控制双层石墨烯的带隙和能带结构。电导和Fano因子（F）由Landauer-Büttiker公式计算。研究发现，当调节层间电压或交换场时，准扩散（F = 1/3）输运转变为隧穿（F = 1）或弹道输运（F = 0）。通过调节层之间的电势差，可以控制电流的自旋极化。
We theoretically investigate the transport properties of bilayer graphene junctions, where the ferromagnetic strips are attached to the middle region of the graphene sheet. In these junctions, we can control the band gap and the band structure of the bilayer graphene by using the bias voltage between the layers and the exchange field induced on the layers. The conductance and Fano factor (F ) are calculated by the Landauer–Büttiker formula. It is found that when the voltage between the layers or the exchange field are tuned, the pseudodiffusive (F = 1/3) transport turns into tunneling (F = 1) or ballistic transport (F = 0). By tuning the potential difference between the layers, one can control the spin polarization of the current.