Near-infrared nano-spectroscopy and emission energy control of semiconductor quantum dots using a phase-change material
Near-infrared nano-spectroscopy and emission energy control of semiconductor quantum dots using a phase-change material
复制标题
使用相变材料的半导体量子点的近红外纳米光谱和发射能量控制
DOI：
10.1088/1742-6596/471/1/012007
复制
发表时间：
2013
期刊：
影响因子：
--
通讯作者：
and T. Saiki
中科院分区：
文献类型：
--
作者：
N. Tsumori;M. Takahashi;Nurrul Syafawati Humam;P. Regreny;M. Gendry;and T. Saiki
我们提出了一种利用相变材料的光学掩模层实现高灵敏度单半导体量子点近场成像光谱的方法。非晶孔径的连续形成和消除使得成像光谱具有高空间分辨率和高收集效率。我们提出的数值模拟和实验结果表明了该技术的有效性。受这种光学掩模效应的启发，提出了一种可以精确控制半导体量子点发射能量的新方法。该方法利用相变材料在非晶化时的体积膨胀，从而允许量子点的可逆发射能量调谐。通过单量子点的光致发光光谱和模拟来证明并进一步探索该方法的可行性。
We have proposed a method to achieve near-field imaging spectroscopy of single semiconductor quantum dots with high sensitivity by using an optical mask layer of a phase-change material. Sequential formation and elimination of an amorphous aperture allows imaging spectroscopy with high spatial resolution and high collection efficiency. We present numerical simulation and experimental result that show the effectiveness of this technique. Inspired by this optical mask effect, a new approach which can precisely control the emission energy of semiconductor quantum dots has been proposed. This method uses the volume expansion of a phase change material upon amorphization, which allows reversible emission energy tuning of quantum dots. A photoluminescence spectroscopy of single quantum dots and simulation were conducted to demonstrate and further explore the feasibility of this method.