A low-power, low-noise, highly-linear receiver for 122 GHz applications in a SiGe BiCMOS technology
A low-power, low-noise, highly-linear receiver for 122 GHz applications in a SiGe BiCMOS technology
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采用 SiGe BiCMOS 技术的低功耗、低噪声、高线性接收器，适用于 122 GHz 应用
DOI：
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发表时间：
2014
期刊：
影响因子：
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通讯作者：
R. Weigel
中科院分区：
文献类型：
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作者：
A. Chakraborty;S. Trotta;K. Aufinger;R. Lachner;R. Weigel
介绍了一种适用于12 2 GHz应用的低功耗接收前端，该前端采用0.13μm SiGe：C BiCOS工艺，采用FT为250 GHz、Fmax为360 GHz的异质结双极晶体管。该接收器包括一个有源下变频混频器、一个LO缓冲器和一个集成了巴伦的中频缓冲器，用于单端到差分转换。对于121-126 GHz的输入信号，在10 MHz的中频下，该接收机的单边带噪声系数最小为10分贝，转换增益大于19分贝，输入参考1分贝压缩点为-7 dBm。该电路在3.3V电源下的功耗仅为50 mW。射频端口处的LO剩余功率小于-30dBm。
This paper presents a low power receiver front-end for 122 GHz applications designed in a 0.13μm SiGe:C BiCMOS technology featuring HBTs with fT of 250 GHz and fmax of 360 GHz. The receiver comprises of an active down-conversion mixer, an LO buffer, and an IF buffer with integrated baluns for single-ended to differential conversion. The receiver achieves a minimum single sideband noise figure of 10 dB, a conversion gain greater than 19 dB and an input-referred 1-dB compression point of -7 dBm at an IF of 10 MHz for input signals between 121 and 126 GHz. The circuit consumes only 50 mW from a 3.3 V power supply. The LO residual power at the RF port is less than -30 dBm.