THERMAL VIBRATIONS IN CONVERGENT-BEAM ELECTRON-DIFFRACTION

THERMAL VIBRATIONS IN CONVERGENT-BEAM ELECTRON-DIFFRACTION
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DOI:
10.1107/s0108767391000375
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发表时间:
1991-05-01
期刊:
ACTA CRYSTALLOGRAPHICA SECTION A
影响因子:
--
通讯作者:
SILCOX, J
SILCOX, J
中科院分区:
其他
文献类型:
--
作者:
LOANE, RF;XU, PR;SILCOX, J

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介绍了冷冻声子技术,作为在CBED模式的多层计算中包括热振动影响的一种手段。该技术产生热扩散背景、菊池带和德拜-沃勒因子,这些在标准多层计算中都被忽略。冻结声子的计算结果与实验硅(100)CBED模式相匹配,样品厚度至少为550埃。在接近室温的条件下,最合适的硅质均方根振动幅值为0.085(5)埃。作为有效性的独立检验,还对计算CBED、实验CBED和电子能量损失谱(EELS)数据进行了比较。冻结声子技术为CBED的模拟和环形暗场扫描透射电镜成像提供了完善的理论基础。
The frozen phonon technique is introduced as a means of including the effects of thermal vibrations in multislice calculations of CBED patterns. This technique produces a thermal diffuse background, Kikuchi bands and a Debye-Waller factor, all of which are neglected in the standard multislice calculation. The frozen phonon calculations match experimental silicon (100) CBED patterns for specimen thicknesses of up to at least 550 angstrom. The best-fit silicon r.m.s. vibration amplitude at near room temperature was determined to be 0.085 (5) angstrom. As an independent check of validity, a comparison of calculated CBED, experimental CBED and electron energy loss spectroscopy (EELS) data was also performed. The frozen phonon technique provides an improved theoretical basis for the simulation of CBED and therefore annular dark field scanning transmission electron microscope imaging.