Photoluminescence Analysis of Thin‐Film Solar Cells
Photoluminescence Analysis of Thin‐Film Solar Cells
复制标题
薄膜太阳能电池的光致发光分析
DOI：
10.1002/9783527636280.ch7
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发表时间：
2011
影响因子：
6.9
通讯作者：
L. Gütay
中科院分区：
文献类型：
--
作者：
T. Unold;L. Gütay
光致发光（PL）辐射的发射是由电子从较高的占据电子态跃迁到较低的未占据态引起的，如果跃迁是偶极允许的，则在光子的发射下。根据量子力学定律，跃迁速率可以通过使用费米黄金法则的一阶微扰理论计算。本章描述了发生在半导体材料中最重要的辐射跃迁。跃迁能随温度升高的变化可能受到光学带隙随温度变化的影响。本章讨论了黄铜矿型Cu（In，Ga）Se 2薄膜和成品太阳能电池的一些典型PL测量结果。本章还区分了低温和室温发光分析。这两种技术都有优点和缺点，这取决于材料和所研究的材料特性。当温度升高到室温时，带-带跃迁变得非常可能，因为带现在被光激发载流子充分填充。
The emission of photoluminescence (PL) radiation is caused by the transition of electrons from higher occupied electronic states into lower unoccupied states, under the emission of photons if the transition is dipole allowed. According to the laws of quantum mechanics, the transition rate can be calculated by first‐order perturbation theory using Fermi's golden rule. This chapter describes the most important radiative transitions occurring in semiconductor materials. The shift of transition energy with increasing temperature may be influenced by a shift in the optical gap with temperature. The chapter discusses some typical PL measurement results for chalcopyrite‐type Cu(In,Ga)Se2thin films and also completed solar cells. The chapter also distinguishes between low‐temperature and room‐temperature luminescence analyses. Both techniques have advantages and disadvantages depending on the material and the investigated material properties. When the temperature is raised to room temperature, band‐band transitions become very likely, as the bands are now sufficiently populated by photoexcited carriers.