Extrinsic Base Surface Passivation in Terahertz GaAsSb/InP DHBTs Using InGaAsP Ledge Structures
Extrinsic Base Surface Passivation in Terahertz GaAsSb/InP DHBTs Using InGaAsP Ledge Structures
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DOI：
10.1109/ted.2010.2093030
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发表时间：
2011-02
影响因子：
3.1
通讯作者：
H. Liu;H. Chang;B. Sun
中科院分区：
文献类型：
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作者：
H. Liu;H. Chang;B. Sun
首次利用二维流体力学物理装置模型研究了新型InGaAsP结构的ii型GaAsSb/InP双异质结双极晶体管（DHBTs）。提出的超薄InGaAsP平台设计提供了一种简单有效的方法来抑制发射极尺寸效应，并使纳米级GaAsSb/InP dhbt能够进一步提高亚毫米波应用的工作频率和集成度。
Type-II GaAsSb/InP double heterojunction bipolar transistors (DHBTs) with a novel InGaAsP ledge structure were studied utilizing a 2-D hydrodynamic physical device model for the first time. The proposed ultrathin InGaAsP ledge design provides a simple and effective approach to suppress the emitter size effect and enables nanoscale GaAsSb/InP DHBTs to further increase the operating frequencies and integration levels for submillimeter-wave applications.