Microstructure of Cu(In,Ga)Se2 Films Deposited in Low Se Vapor Pressure
Microstructure of Cu(In,Ga)Se2 Films Deposited in Low Se Vapor Pressure
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低Se蒸气压沉积Cu(In,Ga)Se2薄膜的微观结构
DOI：
10.1143/jjap.38.2888
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发表时间：
1999
影响因子：
1.5
通讯作者：
T. Wada
中科院分区：
文献类型：
--
作者：
S. Nishiwaki;N. Kohara;T. Negami;H. Miyake;T. Wada
采用扫描电子显微镜、扫描俄歇电子能谱、高分辨电子显微镜和分析电子显微镜研究了低Se流量下沉积的Cu（In，Ga）Se 2（CIGS）薄膜的微观结构。采用“三阶段”工艺在镀钼的钠钙玻璃基片上沉积CIGS薄膜，其中第三阶段使用的Se熔剂限制在标准值的四分之一。在所生长的CIGS膜中，观察到沿着晶界的空隙，并且在表面和晶界处识别出Cu 2Se相。空隙和Cu 2Se层是通过在沉积的第三阶段期间从膜中蒸发In-Se化合物而产生的。根据微观结构的观察，提出了CIGS晶粒表面的反应模型。
The microstructure of Cu(In,Ga)Se2 (CIGS) films deposited under low Se flux was studied using scanning electron microscopy, scanning Auger electron spectroscopy and high resolution and analytical electron microscopy. CIGS films were deposited on Mo coated soda-lime glass substrate using the "3-stage" process in which the Se flux used during the third stage was restricted to a forth of standard value. In the as-grown CIGS films, voids were observed along the grain boundaries and a Cu2Se phase was identified at the surface and the grain boundaries. The voids and Cu2Se layer were produced by vaporization of an In–Se compound from the films during the third stage of deposition. A reaction model on the CIGS grain surface is proposed based on the microstructure observations.