Structural, electrical transport, magnetization, and 1∕f noise studies in 200MeV Ag ion irradiated La0.7Ce0.3MnO3 thin films

Structural, electrical transport, magnetization, and 1∕f noise studies in 200MeV Ag ion irradiated La0.7Ce0.3MnO3 thin films
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200MeV Ag 离子辐照 La0.7Ce0.3MnO3 薄膜的结构、电输运、磁化和 1∕f 噪声研究

DOI:
10.1063/1.1818719
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发表时间:
2004
期刊:
影响因子:
--
通讯作者:
S. Lofland
S. Lofland
中科院分区:
--
文献类型:
--
作者:
Ravi Kumar;R. Choudhary;S. Patil;S. Husain;J. Srivastava;Soma Sanyal;S. Lofland

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研究了200MeV Ag离子辐照对电子掺杂La0.7Ce0.3MnO3薄膜结构、电输运、磁化和低频传导噪声性能的影响。生长后的薄膜呈c轴外延结构,并伴有少量未反应的CeO2相。辐照后,在最低通量下,磁化强度和金属-绝缘体转变温度均升高。影响的进一步增加降低了金属-绝缘子转变温度,导致电阻率增大;而未反应的CeO2在x射线衍射图中消失。另一方面,即使在最低的非零通量下,归一化电噪声也大大增强。令人惊讶的是,在辐照样品中,金属态的导电噪声要比半导体态高得多。本文解释了200MeV Ag离子辐照La0.7Ce0.3MnO3薄膜在结构、电学、磁性和噪声等方面所观察到的变化。
The effect of 200MeV Ag ion irradiation on structural, electrical transport, magnetization, and low-frequency conduction noise properties of electron-doped La0.7Ce0.3MnO3 thin films have been investigated. The as-grown thin films show c-axis epitaxial structure along with a small amount of unreacted CeO2 phase. After the irradiation, at the lowest fluence both the magnetization and metal-insulator transition temperature increase. Further increase in fluence reduces the metal-insulator transition temperature and leads to larger resistivity; however, the unreacted phase of CeO2 disappears in the x-ray diffraction pattern. On the other hand, the normalized electrical noise is greatly enhanced even at the lowest nonzero fluence. Surprisingly the conducting noise in the irradiated samples is much higher in the metallic state than in the semiconducting one. The observed modifications in structural, electrical, magnetic, and noise properties of 200MeV Ag ion irradiated La0.7Ce0.3MnO3 thin films have been explain...