X-ray Absorption Study of Gallium Arsenide at the Ga and As K-edges
X-ray Absorption Study of Gallium Arsenide at the Ga and As K-edges
复制标题
砷化镓在 Ga 和 As K 边的 X 射线吸收研究
DOI：
10.7567/jjaps.32s2.104
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发表时间：
1993
影响因子：
1.5
通讯作者：
F. Rocca
中科院分区：
文献类型：
--
作者：
G. Dalba;D. Diop;P. Fornasini;A. Kuzmin;F. Rocca
我们目前的X射线吸收研究砷化镓在Ga和As的K-边缘。在多重散射理论的框架下对X射线吸收精细结构进行了分析。XANES和EXAFS区域都被考虑。计算的信号与实验数据吻合得很好。结果表明，对于两个边缘的多重散射的贡献是可以忽略不计的波矢量值大于3 <$-1，和单散射分析可以使用没有显着损失的准确性在该区域。
We present X-ray absorption study of gallium arsenide at the Ga and As K-edges. The analysis of the X-ray absorption fine structure was done in the framework of the multiple-scattering theory. Both XANES and EXAFS regions are considered. The calculated signals are in very good agreement with experimental data. It is shown that for both edges multiple-scattering contributions are negligible for wavevector values greater than 3 Å-1, and single-scattering analysis can be used without significant loss of accuracy in that region.