Fabrication and Characterization of Novel Lateral Surface Superlattice Structure Utilizing Schottky Barrier Height Control by Doped Silicon Interface Control Layers
Fabrication and Characterization of Novel Lateral Surface Superlattice Structure Utilizing Schottky Barrier Height Control by Doped Silicon Interface Control Layers
复制标题
利用掺杂硅界面控制层控制肖特基势垒高度的新型横向表面超晶格结构的制造和表征
DOI：
10.1143/jjap.35.1340
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发表时间：
1996
期刊：
影响因子：
--
通讯作者：
Hideki Hasegawa Hideki Hasegawa
中科院分区：
文献类型：
--
作者：
Seiya Kasai Seiya Kasai;Hideki Hasegawa Hideki Hasegawa
基于周期性插入Si界面控制层(SiICL)条纹产生的肖特基势垒高度(SBH)差，提出了一种新的侧表面超晶格(LSSL)结构，并对其进行了制备和表征。首先进行了二维计算机模拟，以获得有关基本设计考虑的信息。电子束感应电流(EBIC)研究直接证实了Si ICL条纹对SBH的调制作用。该器件在10K以下的低温下表现出漏极电导和跨导的周期性振荡，这一行为与以往的分裂栅器件有明显的不同。用序贯共振隧穿模型解释了这些振荡的机制。根据数据的定量分析，在金属-半导体界面产生了70-150 meV的SBH差，在异质界面产生了2-3 meV的量子化能级。
A novel lateral surface superlattice (LSSL) structure based on the Schottky barrier height (SBH) difference produced by periodic insertion of Si interface control layer (Si ICL) stripes is proposed, fabricated and characterized. Two-dimensional computer simulation was first performed to gain information on basic design considerations. An electron-beam-induced current (EBIC) study on the fabricated device directly confirmed SBH modulation by Si ICL stripes. The devices showed periodic oscillations of drain conductance and transconductance at low temperatures up to 10 K. This behavior is distinctly different from that of previous split-gate devices. The mechanism of these oscillations was explained by a sequential resonant tunneling model. According to a quantitative analysis of the data, SBH difference of 70–150 meV was produced at the metal-semiconductor interface, which produced quantized levels with a separation of 2–3 meV at the heterointerface.