Synthesis and structural characterization of vertical ferromagnetic MnAs/semiconducting InAs heterojunction nanowires
Synthesis and structural characterization of vertical ferromagnetic MnAs/semiconducting InAs heterojunction nanowires
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DOI：
10.7567/jjap.55.075503
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发表时间：
2016-06
影响因子：
1.5
通讯作者：
Ryutaro Kodaira;S. Hara;Kyohei Kabamoto;H. Fujimagari
中科院分区：
文献类型：
--
作者：
Ryutaro Kodaira;S. Hara;Kyohei Kabamoto;H. Fujimagari
The purpose of this study is to synthesize vertical ferromagnetic/semiconducting heterojunction nanowires by combing the catalyst-free selective-area growth of InAs nanowires and the endotaxial nanoclustering of MnAs and to structurally and magnetically characterize them. MnAs penetrates the InAs nanowires to form nanoclusters. The surface migration length of manganese adatoms on the nanowires, which is estimated to be 600 nm at 580 °C, is a key to the successful fabrication of vertical MnAs/InAs heterojunction nanowires with atomically abrupt heterointerfaces.
