Electron accumulation at nonpolar and semipolar surfaces of wurtzite InN from generalized infrared ellipsometry
Electron accumulation at nonpolar and semipolar surfaces of wurtzite InN from generalized infrared ellipsometry
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DOI：
10.1063/1.3261731
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发表时间：
2009-11
影响因子：
4
通讯作者：
V. Darakchieva;M. Schubert;T. Hofmann;B. Monemar;C. Hsiao;Ting-Wei Liu;Li‐Chyong Chen;W. Schaff;Y. Takagi;Y. Nanishi
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文献类型：
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作者：
V. Darakchieva;M. Schubert;T. Hofmann;B. Monemar;C. Hsiao;Ting-Wei Liu;Li‐Chyong Chen;W. Schaff;Y. Takagi;Y. Nanishi
用广义红外椭圆偏振法（GIRSE）研究了非极性（112 <$0）取向和半极性（101 <$1）取向纤锌矿InN薄膜的自由电子性质。我们证明了GIRSE的表面电荷积累层的敏感性，并发现一个独特的表面电子积累发生在所有的表面。根据表面取向和体电子浓度的不同，得到的表面电子片密度在0.9×1013 ~ 2.3×1014 cm−2之间变化。确定了表面电子迁移率参数的上限为417-644 cm ~ 2/V·s，并根据表面的电子约束进行了讨论。
The free electron properties of nonpolar (112¯0)-oriented and semipolar (101¯1)-oriented wurtzite InN films are studied by generalized infrared ellipsometry (GIRSE). We demonstrate the sensitivity of GIRSE to the surface charge accumulation layer and find a distinct surface electron accumulation to occur at all surfaces. The obtained surface electron sheet densities are found to vary from 0.9×1013 to 2.3×1014 cm−2 depending on the surface orientation and bulk electron concentration. The upper limits of the surface electron mobility parameters of 417–644 cm2/V s are determined and discussed in the light of electron confinement at the surface.