Effect of postdeposition annealing on the structural and electrical characteristics of Yb2TiO5 charge trapping layers
Effect of postdeposition annealing on the structural and electrical characteristics of Yb2TiO5 charge trapping layers
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DOI：
10.1063/1.3402774
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发表时间：
2010-04
影响因子：
4
通讯作者：
T. Pan;Jisim Jung;Xin Wu
中科院分区：
文献类型：
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作者：
T. Pan;Jisim Jung;Xin Wu
在这封信中，我们提出了一种金属氧化物-高k-氧化物-硅型（MOHOS）存储器结构，包括高k Yb 2 TiO 5电荷捕获层和随后的沉积后退火处理。沉积后退火对Yb 2 TiO 5电荷捕获层的结构特性的影响，探讨了通过X射线衍射，透射电子显微镜，和X射线光电子能谱。在800 °C退火的Yb 2 TiO 5 MOHOS型器件显示出比在其他退火温度下制备的器件更大的2.8 V的存储窗口和更小的10%的电荷损失。这一结果是由于形成了结晶良好的Yb 2 TiO 5结构和薄的低k界面层，从而捕获电荷载流子的可能性更高。
In this letter, we proposed a metal-oxide-high-k-oxide-silicon-type (MOHOS) memory structure incorporating a high-k Yb2TiO5 charge trapping layer and the subsequent postdeposition annealing treatment. The effect of postdeposition annealing on the structural properties of Yb2TiO5 charge trapping layers was explored by x-ray diffraction, transmission electron microscopy, and x-ray photoelectron spectroscopy. The Yb2TiO5 MOHOS-type device annealed at 800 °C exhibited a larger memory window of 2.8 V and a smaller charge loss of 10% than did those prepared at other annealing temperatures. This outcome is attributed to the higher probability for trapping the charge carrier due to the formation of a well-crystallized Yb2TiO5 structure and a thin low-k interfacial layer.