A Full Band Monte Carlo Study of High Field Carrier Transport in 4H-SiC

A Full Band Monte Carlo Study of High Field Carrier Transport in 4H-SiC
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DOI：
10.4028/www.scientific.net/msf.338-342.765
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发表时间：
2000-05
期刊：
Materials Science Forum
影响因子：
--
通讯作者：
H. Nilsson;E. Bellotti;K. Brennan;M. Hjelm
H. Nilsson;E. Bellotti;K. Brennan;M. Hjelm
中科院分区：
其他
文献类型：
--
作者：
H. Nilsson;E. Bellotti;K. Brennan;M. Hjelm

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用双极全带系综Monte Carlo模型研究了4 H-SiC的高场输运特性。从全能带结构出发，计算了电子和空穴的碰撞电离跃迁率和声子散射率。模拟结果表明，电子和空穴的碰撞电离系数具有较大的各向异性。
The high field transport properties of 4H-SiC have been studied using a bipolar full band ensemble Monte Carlo model. The impact ionization transition rates and the phonon scattering rates for both electrons and holes have been calculated numerically from the full band structure. The simulation results show a large anisotropy in the impact ionization coefficients for both electrons and holes.