The Effect of Tungsten Volume on Residual Stress and Cell Characteristics in MONOS
The Effect of Tungsten Volume on Residual Stress and Cell Characteristics in MONOS
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钨体积对 MONOS 中残余应力和电池特性的影响
DOI：
10.1109/jeds.2019.2901298
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发表时间：
2019
影响因子：
2.3
通讯作者：
Y. Song
中科院分区：
文献类型：
--
作者：
Y. Oh;Jae;H. Kino;D. Kim;Tetsu Tanaka;Y. Song
利用金属-氧化物-氮化物-氧化物-半导体（MONOS）器件研究了钨沉积过程中残余应力的影响。在拉伸和压缩应力条件下测量了残余应力随钨体积的变化。残余应力的增加与沉积体积成比例。应力影响Si/SiO2界面，并导致电性能的恶化，这是实验观察到的界面陷阱密度和存储窗口的测量过程中。我们证实了残余应力导致MONOS器件的电池特性退化，并且无论极性如何，应力的绝对值都会显著影响这些问题。从我们的实验结果中，我们可以预测存储器件中单元特性的退化，并确认在制造过程中需要适当的应力控制。
The effect of residual stress during the tungsten deposition process were investigated using metal–oxide–nitride–oxide–semiconductor (MONOS) devices. The variation of residual stress due to tungsten volume was measured under tensile and compressive stress conditions. Residual stress increased in proportion to the deposition volume. Stress influenced the Si/SiO2 interface and caused deterioration of the electrical properties, which was experimentally observed during measurements of the interface trap densities and memory windows. We confirmed that residual stress led to degradation of the cell characteristics of MONOS devices, and the absolute value of stress significantly affected these issues regardless of the polarity. From our experiments results, we can predict the degradation of cell characteristics in memory devices, and confirm the need for appropriate stress control in manufacturing process.