Hydroxyl radical and thermal annealing on amorphous InGaZnO4 films for DNA immobilizations
Hydroxyl radical and thermal annealing on amorphous InGaZnO4 films for DNA immobilizations
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DOI：
10.1016/j.colsurfb.2015.04.024
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发表时间：
2015-06-01
影响因子：
5.8
通讯作者：
Tabata, Hitoshi
中科院分区：
文献类型：
--
作者：
Sun, Dali;Yamahara, Hiroyasu;Tabata, Hitoshi
为了操控DNA固定，研究了羟基自由基（OH）和热退火对非晶InGaZnO₄（aIGZO）薄膜表面的影响。分别进行了X射线光电子能谱和荧光测量，以揭示表面OH覆盖情况和DNA固定状态。对薄膜表面OH终止的系统研究表明，使DNA固定均匀的OH表面覆盖与局部表面电势有关。此外，aIGZO薄膜表面对OH的亲和力对热退火敏感。在高温下退火的薄膜表面观察到表面OH覆盖的显著变化。这种行为是由从非晶态到晶态的结构变化所决定的，该结构变化调控了DNA固定。这些结果表明，aIGZO薄膜对OH的亲和力取决于诸如缺陷等结构特性。这项研究表明，非晶结构对于获得高的OH表面覆盖以控制DNA固定至关重要，因此更适合用于生物传感。（C）2015爱思唯尔有限公司。保留所有权利。
The effect of hydroxyl radicals (OH) and thermal annealing on an amorphous InGaZnO4 (aIGZO) film surface was investigated for manipulation of DNA immobilization. X-ray photoemission and fluorescence measurements were conducted to reveal the status of surface OH coverage and DNA immobilization, respectively. Systematic examinations concerning OH termination on the film surface suggested that the surface coverage of OH leveling DNA immobilization was related to the local surface potential. Furthermore, OH affinity on the aIGZO film surface was sensitive to thermal annealing. A remarkable change in surface OH coverage was observed for the film surface annealed at high temperature. This behavior was framed by a structural change from amorphous to crystalline state, which regulated DNA immobilization. These results indicate that the OH affinity on aIGZO films is dependent on structural properties such as defects. This study suggests that an amorphous structure is critical for obtaining a high OH surface coverage governing DNA immobilization, and is hence more suitable for biosensing. (C) 2015 Elsevier B.V. All rights reserved.