Microstructure and mechanical properties of porous SiC ceramics by carbothermal reduction and subsequent recrystallization sintering
Microstructure and mechanical properties of porous SiC ceramics by carbothermal reduction and subsequent recrystallization sintering
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碳热还原再结晶烧结多孔SiC陶瓷的微观结构和力学性能
DOI：
10.1080/21870764.2020.1728045
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发表时间：
2020-02
影响因子：
2.3
通讯作者：
Ishizaki Kozo
中科院分区：
文献类型：
--
作者：
Zhang Jian-Fei;Zhou Xiao-Nan;Zhi Qiang;Zhao Shan;Huang Xin;Zhang Nan-Long;Wang Bo;Yang Jian-Feng;Ishizaki Kozo
采用碳热还原和再结晶烧结相结合的新方法制备了多孔碳化硅陶瓷。首先，以微尺度碳化硅颗粒为骨架，通过纳米碳颗粒与氧化硅蒸汽的气固反应原位合成碳化硅球形纳米晶体；碳化硅纳米晶体的形状和直径与原始碳纳米颗粒有关，表现出形状记忆效应。通过SiC纳米晶的蒸发-冷凝烧结，获得了高纯度的具有定制颈围面积的α -SiC多孔陶瓷。多孔再结晶SiC （RSiC）陶瓷的抗弯强度与d/d(0)值（颈径与粗微米级晶粒直径之比）呈线性关系。颈部面积和d/d(0)值随着SiC纳米晶含量的增加而增加，这是由于较高的饱和蒸汽压导致了SiC纳米颗粒在颈部的高质量迁移率。结果表明，在孔隙率为42%的多孔RSiC陶瓷中加入20 wt.%的纳米SiC，在1950℃下烧结2 h，可以获得接近99%的d/d(0)值和75.7 MPa的优异抗弯强度。
Porous SiC ceramics were prepared by a new approach combination of carbothermal reduction and subsequent recrystallization sintering. Firstly, micro-sized SiC particles were used as the skeleton, and SiC spherical nanocrystals were in-situ synthesized by the vapor-solid reaction between carbon nanoparticles and silicon monoxide vapor. The shape and diameter of SiC nanocrystals are related to the pristine carbon nanoparticles, showing a shape memory effect. After recrystallization sintering, high purity alpha-SiC porous ceramics with tailored necking area were obtained by the evaporation-condensation of SiC nanocrystals. A linear relation was revealed between the flexural strength and the value of d/d(0) of porous recrystallized SiC (RSiC) ceramics (the neck diameter to coarse micron-sized grains diameter ratio). The necking area and d/d(0) value increased with the SiC nanocrystals content, due to the higher saturated vapor pressure resulted in high mass mobility to neck area of SiC nanoparticles. As a result, a remarkable value of d/d(0) similar to 99% and outstanding flexural strength of 75.7 MPa could be achieved for the porous RSiC ceramics with similar to 42% porosity by adding 20 wt.% nano-sized SiC sintered at 1950 degrees C for 2 h.
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DOI：
10.1016/s0921-5093(02)00470-7
发表时间：
2003-05
影响因子：
6.4
作者：
Z. Xie;Yi-bing Cheng;Yong Huang
通讯作者：
Z. Xie;Yi-bing Cheng;Yong Huang
影响因子：
3.7
作者：
Zhenyu Liu;L. Ci;N. Jin-Phillipp;M. Rühle
通讯作者：
Zhenyu Liu;L. Ci;N. Jin-Phillipp;M. Rühle
DOI：
10.4028/www.scientific.net/msf.492-493.765
发表时间：
2005-04
期刊：
Materials Science Forum
影响因子：
--
作者：
K. Nishiyabu;S. Matsuzaki;K. Okubo;M. Ishida;Shigeo M. Tanaka
通讯作者：
K. Nishiyabu;S. Matsuzaki;K. Okubo;M. Ishida;Shigeo M. Tanaka
通过沉积热解碳层并使其与一氧化硅反应，在碳纤维上合成碳化硅涂层
影响因子：
10.9
作者：
通讯作者：
--
影响因子：
3.9
作者：
R. M. Spriggs
通讯作者：
R. M. Spriggs