Influence of Hafnium Defects on the Optical and Structural Properties of Zirconium Nitride
Influence of Hafnium Defects on the Optical and Structural Properties of Zirconium Nitride
复制标题
DOI：
10.1002/pssr.202100372
复制
发表时间：
2021-08
期刊：
影响因子：
--
通讯作者：
S. Bopp;Haoliang Qian;Zhaowei Liu
中科院分区：
文献类型：
--
作者：
S. Bopp;Haoliang Qian;Zhaowei Liu
近年来，过渡金属单氮化物（TMN）在等离子体和非线性光学中的应用以惊人的速度发展。TiN和ZrN已经成为该方向的主导材料。然而，尽管报道了ZrN在等离子体应用中与TiN相比具有较低的介电损耗和增强的可调谐性，但是关于TiN的工作主体比ZrN的工作要成熟得多。关于ZrN的工作的这种不平衡可能部分地是用于制造ZrN的前体材料中的污染的影响，导致介电常数的虚部增加，并且在再现具有类似文献性质的ZrN时受挫。在此，铪缺陷（锆中的一种常见的污染物）的氮化物薄膜的光学性能与射频（RF）磁控溅射生长的影响进行了报道。使用由Hf污染的“702级”Zr合金制成的溅射靶将Hf缺陷引入氮化物膜中。在所有分析的薄膜中发现Hf缺陷，浓度约为0.5 - 1 at %。对射频磁控溅射Hfx：ZryNz薄膜（x <$y，z）的化学、结构和光学性质进行了表征和讨论。
Recently, the application of transition metal mononitrides (TMNs) to plasmonics and nonlinear optics has grown at an astounding rate. TiN and ZrN have emerged as the dominating materials in this direction. However, even though ZrN is reported to have lower dielectric losses and enhanced tunability in plasmonic applications when compared with TiN, the body of work regarding TiN is much more mature than that of ZrN. This imbalance of work regarding ZrN may be in part an effect of pollution in precursor materials for the fabrication of ZrN, leading to an increased imaginary part of permittivity and frustration in reproduction of ZrN with literature‐like properties. Herein, the effects of Hf defects (a common pollutant in Zr) on the optical properties of nitride films grown with radio frequency (RF) magnetron sputtering are reported. Hf defects are introduced into nitride films with a sputtering target made of the Hf‐polluted “grade 702” Zr alloy. Hf defects are found in all analyzed films with concentrations at around ≈0.5−1 at %. Chemical, structural, and optical properties of RF magnetron‐sputtered Hf x :Zr y N z films (x ≪ y,z) are characterized and discussed.