Non-Langevin bimolecular recombination in low-mobility materials
Non-Langevin bimolecular recombination in low-mobility materials
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DOI：
10.1016/j.jnoncrysol.2005.11.099
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发表时间：
2006-06-15
影响因子：
3.5
通讯作者：
Österbacka, R.
中科院分区：
文献类型：
--
作者：
Juska, G.;Arlauskas, K.;Österbacka, R.
我们研究了低迁移率材料中载流子的双分子重组系数(B)，其中Langevin重组被还原为无机a-Si:H， mu - c-Si:H和有机区域规则聚（3-己基噻吩）/1-（3-甲氧基羰基）丙基-1-苯基-[6,6]-甲烷富勒烯（RR-PHT/PCBM）共混物。我们已经使用了多种实验技术，即空间电荷限制电流（SCLC），线性增加电压的光生载流子提取（photoceliv）和双注入电流（Dol）瞬态技术来研究B的温度和电场依赖性。对于r - pht /PCBM共混物，我们观察到B对电场的依赖性较弱，并且Langevin复合的减少最为显著。(c) 2006 Elsevier B.V.版权所有
We have investigated the bimolecular recombination coefficient (B) of charge carriers in low-mobility materials, in which the Langevin recombination is reduced: inorganic a-Si:H, mu c-Si:H and the organic regioregular poly(3-hexylthiophene)/1-(3-methoxycarbonyl)propyl-1-phenyl-[6,6]-methanofullerene (RR-PHT/PCBM) blend. We have been using a multitude of experimental techniques, namely space-charge-limited current (SCLC), photogenerated charge carrier extraction by linearly increasing voltage (photo-CELIV) and double injection (Dol) current transient techniques for investigation of temperature and electric field dependencies of B. For RR-PHT/PCBM blends, we observed a weak dependence of B on electric field and the most significant reduction of Langevin recombination. (c) 2006 Elsevier B.V. All rights reserved.