Microscopic origin of n-type behavior in Si-doped AlN
Microscopic origin of n-type behavior in Si-doped AlN
复制标题
Si 掺杂 AlN 中 n 型行为的微观起源
DOI：
10.1103/physrevb.88.085202
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发表时间：
2013
影响因子：
3.7
通讯作者：
["D. F. Hevia
中科院分区：
文献类型：
--
作者：
["D. F. Hevia
In contrast to a long held belief, it has been shown that n-type AlN can be achieved through Si-doping. This is unexplainable from the current theoretical understanding, a situation that hinders further progress in AlN-based ultraviolet (UV) technologies. From first-principles calculations, we find that n-type behavior arises under N-rich growth conditions due to high Si solubility and to the formation of V Al-bound Si clusters. We show that metal-rich growth may lead to weak n-type behavior due to oxygen impurities binding and deactivating cation vacancies. We provide clues for designing production processes for n-type AlN as a base material for potential new UV sources.
