X‐Ray Extinction Contrast Topography of Silicon Strained by Thin Surface Films
X‐Ray Extinction Contrast Topography of Silicon Strained by Thin Surface Films
复制标题
薄表面薄膜应变硅的 X 射线消光对比形貌
DOI：
10.1063/1.1702943
复制
发表时间：
1965
影响因子：
3.2
通讯作者：
I. Blech
中科院分区：
文献类型：
--
作者：
E. S. Meieran;I. Blech
用消光衬底技术制作的氧化硅片的衍射形貌显示，在氧化层中刻蚀的台阶下，直接从硅表面衍射出极高的强度。在硅上蒸发的金属或电介质膜的边缘同样显示出增强的强度。在某些情况下，这些区域的衍射强度降低(小于纯Si的衍射强度)。这两个效应归因于由于薄膜与衬底的粘合，通过台阶或边缘传递到硅的弹性应变。强度的增强是由于消光对比度，而强度的降低是由于Borrmann反常传输效应。台阶相对于衍射矢量ghkl的取向、台阶的高度以及衬底和薄膜的成分都是影响衍射强度的重要参数。
Diffraction topographs of oxidized silicon wafers made by the extinction contrast technique show extremely high intensity being diffracted from the silicon surface directly under steps etched in the oxide. Edges of metal or dielectric films evaporated on silicon similarly show enhanced intensity. In some cases, a decreased diffracted intensity (less than that diffracted by pure Si) is seen in these regions. These two effects are attributed to elastic strain transmitted to the Si by the step or edge, due to the adherence of the film to the substrate. Enhanced intensity is due to extinction contrast, while decreased intensity is due to a Borrmann anomalous transmission effect. The orientation of the step with respect to the diffraction vector ghkl, the height of the step, and the compositions of substrate and film are shown to be important parameters affecting the diffracted intensity.