Quantum Interference Measurements and Their Application to Analysis of Ultrafast Photocarrier Dynamics in Semiconductor Solar Cell Materials
Quantum Interference Measurements and Their Application to Analysis of Ultrafast Photocarrier Dynamics in Semiconductor Solar Cell Materials
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DOI：
10.1002/qute.201900098
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发表时间：
2020-01
影响因子：
4.4
通讯作者：
H. Tahara;Y. Kanemitsu
中科院分区：
文献类型：
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作者：
H. Tahara;Y. Kanemitsu
量子干涉测量是利用各种光激发过程中光场和电子态的位相信息来分析电子动力学的有力手段。这种方法对于精确测量半导体太阳能电池材料中的光载流子产生过程特别有用。最近发展了两种量子干涉方法，即光电流拍频光谱和锁相脉冲瞬时吸收光谱，用于分析超快光载流子的产生过程。本综述描述了如何利用这两种技术来识别太阳能电池材料中有助于光子到电流转换过程的电子态。强调了两种状态：(I)导致光载流子产生的大块晶体和薄膜禁带内的局域能级；(Ii)纳米晶体中激子复合体，其超快动力学直接影响光吸收过程的效率。由于量子干涉测量提供了其他传统方法无法获得的量子相位信息，因此它们也可以用于光电材料和器件的高级评估和优化。
Quantum interference measurement is a powerful method to analyze electronic dynamics using phase information of optical fields and electronic states during various types of optical excitation processes. This method is particularly useful for accurate measurements of photocarrier generation processes in semiconductor solar cell materials. Two quantum interference methods, namely photocurrent beat spectroscopy and phase‐locked pulses transient absorption spectroscopy, are recently developed to analyze ultrafast photocarrier generation processes. This review describes how these two techniques can be employed to identify electronic states contributing to photon‐to‐current conversion processes in solar cell materials. Two types of states are highlighted: (i) localized levels within the bandgaps of bulk crystals and thin films leading to photocarrier generation, and (ii) exciton complexes in nanocrystals whose ultrafast dynamics directly influence the efficiency of photoabsorption processes. Since quantum interference measurements provide quantum phase information that is not accessible by other conventional methods, they can also be utilized for advanced evaluation and optimization of optoelectronic materials and devices.