High-efficiency plasma treatment for surface modification of LPCVD ZnO

High-efficiency plasma treatment for surface modification of LPCVD ZnO
复制标题

高效等离子体处理LPCVD ZnO表面改性

DOI:
--
复制
发表时间:
2015
期刊:
影响因子:
--
通讯作者:
V. Afanasjev
V. Afanasjev
中科院分区:
--
文献类型:
--
作者:
D. Andronikov;A. Abramov;E. Terukov;A. Vinogradov;A. Ankudinov;V. Afanasjev

文献摘要

被引文献

相似文献

对用于薄膜表面改性的LPCVD掺硼氧化锌进行了等离子体处理。结果表明,射频磁控Ar等离子体处理5min就足以将沉积前的表面形貌从V型转变为U型,这更适合于微晶硅的生长,并提高了微晶硅作为光伏组件材料的性能。研究了等离子体处理对薄膜光电性能和表面形貌的影响。对所得结果的比较分析表明,短时间处理可以在不显著恶化处理薄膜的结构和电学和光学性能的情况下提供所需的表面形貌变化,而长时间处理会导致电学性能的降低,这很可能是由于在氧化锌薄膜表面形成过多的缺陷造成的。这些结果表明,尽管前景看好,射频磁控等离子体处理用于光伏组件生产的氧化锌需要仔细优化。
Plasma treatment of LPCVD Boron-doped ZnO aimed at surface modification of the films has been performed. We have shown that five minutes treatment with RF magnetron Ar plasma can be sufficient to transform surface morphology from as-deposited V-type to U-type, which better suits the growth and enhances the properties of post-deposited microcrystalline silicon as a material for PV modules. Effect of plasma treatment on optical and electrical properties and surface morphology has been studied. Comparative analysis of the acquired results has shown that short time treatment can provide required changes in surface morphology without significant deterioration of structure and electrical and optical properties of treated films, while long time treatment results in reduction of electronic properties most probably caused by excess defect formation at the surface of ZnO films. These results show that, despite promising outlooks, RF magnetron plasma treatment of ZnO for the production of PV modules requires careful optimization.